Silicon on Insulator Wafers

Semicera’s Silicon-on-Insulator wafers provide high-performance solutions for advanced semiconductor applications. Ideally suited for MEMS, sensors, and microelectronics, these wafers provide excellent electrical isolation and low parasitic capacitance. Semicera ensures precision manufacturing, delivering consistent quality for a range of innovative technologies. We look forward to being your long-term partner in China.

Silicon on Insulator Wafers from Semicera are designed to meet the growing demand for high-performance semiconductor solutions. Our SOI wafers offer superior electrical performance and reduced parasitic device capacitance, making them ideal for advanced applications such as MEMS devices, sensors, and integrated circuits. Semicera’s expertise in wafer production ensures that each SOI wafer provides reliable, high-quality results for your next-generation technology needs.

Our Silicon on Insulator Wafers offer an optimal balance between cost-effectiveness and performance. With soi wafer cost becoming increasingly competitive, these wafers are widely used in a range of industries, including microelectronics and optoelectronics. Semicera’s high-precision production process guarantees superior wafer bonding and uniformity, making them suitable for a variety of applications, from cavity SOI wafers to standard silicon wafers.

Principais recursos:

       •  High-quality SOI wafers optimized for performance in MEMS and other applications.

       •  Competitive soi wafer cost for businesses seeking advanced solutions without compromising quality.

       •  Ideal for cutting-edge technologies, offering enhanced electrical isolation and efficiency in silicon on insulator systems.

Our Silicon on Insulator Wafers are engineered to provide high-performance solutions, supporting the next wave of innovation in semiconductor technology. Whether you’re working on cavity SOI wafers, MEMS devices, or silicon on insulator components, Semicera delivers wafers that meet the highest standards in the industry.

Unid

Produção

Pesquisar

Fictício

Parâmetros de cristal

Polytype

4H

Erro de orientação da superfície

<11-20 >4±0.15°

Parâmetros elétricos

Dopante

nitrogênio do tipo n

Resistividade

0.015-0.025ohm·cm

Parâmetros mecânicos

Diâmetro

150.0±0.2mm

Grossura

350±25 μm

Orientação plana primária

[1-100]±5°

Comprimento plano primário

47.5±1.5mm

Apartamento secundário

Nenhum

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Arco

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Urdidura

≤35 μm

≤45 μm

≤55 μm

A rugosidade frontal (Si-face) (AFM)

Ra≤0.2nm (5μm*5μm)

Estrutura

Densidade de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / D

Bpd

≤1500 ea/cm2

≤3000 ea/cm2

N / D

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / D

Qualidade frontal

Frente

Si

Acabamento superficial

Si-face cmp

Partículas

≤60ea/wafer (size≥0.3μm)

N / D

Arranhões

≤5ea/mm. Cumulative length ≤Diameter

Cumulative length≤2*Diameter

N / D

Casca de laranja/poços/manchas/estrias/rachaduras/contaminação

Nenhum

N / D

Chips/recuos/fraturas/placas de fratura/placas hexadecimais

Nenhum

Áreas de poliateiro

Nenhum

Cumulative area≤20%

Cumulative area≤30%

Marcada a laser dianteira

Nenhum

Qualidade de volta

Final traseiro

CMP C-FACE

Arranhões

≤5ea/mm,Cumulative length≤2*Diameter

N / D

Defeitos traseiros (chips/recuos de borda)

Nenhum

Rugosidade de volta

Ra≤0.2nm (5μm*5μm)

Marcação de laser traseiro

1 mm (da borda superior)

Borda

Borda

Chanfro

Embalagem

Embalagem

Epi pronto com embalagem a vácuo

Embalagem de cassetes de várias linhas

*Notes: “NA” means no request Items not mentioned may refer to SEMI-STD.

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