Silicon Substrate

Semicera Silicon Substrates are precision-engineered for high-performance applications in electronics and semiconductor manufacturing. With exceptional purity and uniformity, these substrates are designed to support advanced technological processes. Semicera ensures consistent quality and reliability for your most demanding projects.

Semicera Silicon Substrates are crafted to meet the rigorous demands of the semiconductor industry, offering unparalleled quality and precision. These substrates provide a reliable foundation for various applications, from integrated circuits to photovoltaic cells, ensuring optimal performance and longevity.

The high purity of Semicera Silicon Substrates ensures minimal defects and superior electrical characteristics, which are critical for the production of high-efficiency electronic components. This level of purity helps in reducing energy loss and improving the overall efficiency of semiconductor devices.

Semicera employs state-of-the-art manufacturing techniques to produce silicon substrates with exceptional uniformity and flatness. This precision is essential for achieving consistent results in semiconductor fabrication, where even the slightest variation can impact device performance and yield.

Available in a variety of sizes and specifications, Semicera Silicon Substrates cater to a wide range of industrial needs. Whether you are developing cutting-edge microprocessors or solar panels, these substrates provide the flexibility and reliability required for your specific application.

Semicera is dedicated to supporting innovation and efficiency in the semiconductor industry. By providing high-quality silicon substrates, we enable manufacturers to push the boundaries of technology, delivering products that meet the evolving demands of the market. Trust Semicera for your next-generation electronic and photovoltaic solutions.

Unid

Produção

Pesquisar

Fictício

Parâmetros de cristal

Polytype

4H

Erro de orientação da superfície

4±0.15°

Parâmetros elétricos

Dopante

nitrogênio do tipo n

Resistividade

0,015-0.025OHM · cm

Parâmetros mecânicos

Diâmetro

150,0 ± 0,2 mm

Grossura

350 ± 25 µm

Orientação plana primária

[1-100]±5°

Comprimento plano primário

47,5 ± 1,5 mm

Apartamento secundário

Nenhum

TTV

≤5 µm

≤10 µm

≤15 µm

LTV

≤3 μm (5mm*5mm)

≤5 μm (5mm*5mm)

≤10 μm (5mm*5mm)

Arco

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Urdidura

≤35 µm

≤45 µm

≤55 µm

A rugosidade frontal (Si-face) (AFM)

Ra≤0,2 nm (5μm*5μm)

Estrutura

Densidade de micropipe

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Impurezas de metal

≤5E10atoms/cm2

N / D

Bpd

≤1500 ea/cm2

≤3000 ea/cm2

N / D

TSD

≤500 ea/cm2

≤1000 ea/cm2

N / D

Qualidade frontal

Frente

Si

Acabamento superficial

Si-face cmp

Partículas

≤60ea/wafer (size≥0,3μm)

N / D

Arranhões

≤5ea/mm. Comprimento cumulativo ≤DIAMETER

Comprimento cumulativo ≤2*diâmetro

N / D

Casca de laranja/poços/manchas/estrias/rachaduras/contaminação

Nenhum

N / D

Chips/recuos/fraturas/placas de fratura/placas hexadecimais

Nenhum

Áreas de poliateiro

Nenhum

Área cumulativa ≤20%

Área cumulativa ≤30%

Marcada a laser dianteira

Nenhum

Qualidade de volta

Final traseiro

CMP C-FACE

Arranhões

≤5ea/mm, comprimento cumulativo≤2*diâmetro

N / D

Defeitos traseiros (chips/recuos de borda)

Nenhum

Rugosidade de volta

Ra≤0,2 nm (5μm*5μm)

Marcação de laser traseiro

1 mm (da borda superior)

Borda

Borda

Chanfro

Embalagem

Embalagem

Epi pronto com embalagem a vácuo

Embalagem de cassetes de várias linhas

*Notas : “NA” significa que nenhum item de solicitação não mencionado pode se referir ao Semi-STD.

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Sic Wafers

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