Tantalum carbide (TaC) coatings with high purity, high temperature stability and high chemical resistance

TaC coating is a new generation of high temperature resistant material, with better high temperature stability than SiC, serving as a corrosion-resistant, oxidation-resistant, and wear-resistant coating, can be used in the environment above 2000℃, widely used in aerospace ultra-high temperature hot end parts, the third generation of semiconductor single crystal growth and other fields.

A Semicera fornece revestimentos especializados de carboneto de tântalo (TAC) para vários componentes e transportadores. Semicera leading coating process enables tantalum carbide (TaC) coatings to achieve high purity, high temperature stability and high chemical tolerance, improving product quality of SIC/GAN crystals and EPI layers (Graphite coated TaC susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.

 

After years of development, Semicera has conquered the technology of CVD TaC with the joint efforts of the R&D department. Defects are easy to occur in the growth process of SiC wafers, but after using TaC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth 

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Parte tac para crescimento único cristal

Coating de carboneto de Tantalum Antiwea

Grafite com anel revestido com TAC

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com e sem TAC

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Depois de usar o TAC (à direita)

Além disso, a vida útil dos produtos de revestimento TAC da Semicera é mais longa e mais resistente à alta temperatura do que a do revestimento SiC. Após muito tempo de dados de medição de laboratório, nosso TAC pode trabalhar por um longo tempo a um máximo de 2300 graus Celsius. A seguir estão algumas de nossas amostras:

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Susceptador revestido com TAC

Tecnologia inovadora de revestimento de carboneto de tantalum

Grafite com reator revestido com TAC

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(a) Diagrama esquemático do dispositivo de cultivo de lingote de cristal único sic por método PVT (b) Suporte de semente revestido com TAC (incluindo semente de sic) (c) guia de grafite revestida com tac anel

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Recurso principal

Local de trabalho semicera

Local de trabalho semicera 2

Máquina de equipamentos

Processamento da CNN, limpeza química, revestimento de CVD

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