SIC special high purity graphite crucible 6-inch substrate

WeiTai Energy Technology Co., Ltd. is a leading supplier specializing in wafer and advanced semiconductor consumables. We are dedicated to providing high-quality, reliable, and innovative products to semiconductor manufacturing, photovoltaic industry and other related fields.

Our product line includes SiC/TaC coated graphite products and ceramic products, encompassing various materials such as silicon carbide, silicon nitride, and aluminum oxide and etc.

As a trusted supplier, we understand the importance of consumables in the manufacturing process, and we are committed to delivering products that meet the highest quality standards to fulfill our customers’ needs.

SIC special high purity graphite crucible 6-inch substrate

Graphite crucible is mainly used to smelt copper, brass, gold, silver, zinc and lead, and other non-ferrous metals and their alloys.

Our graphite crucible are processed with high purity isostatic pressed graphite, which has good thermal conductivity and high temperature resistance. In the process of high temperature use, the coefficient of thermal expansion is small, and it has certain strain resistance to acute heat and acute cooling. It has strong corrosion resistance to acid and alkaline solution and excellent chemical stability. The specific models can be customized with drawings and samples, and the materials are domestic graphite and imported graphite to meet the different needs of customers.

The main raw materials of graphite crucible are graphite, silicon carbide, silica, refractory clay, pitch, and tar, etc.

SiC Crucible (5)

>High Pure Graphite Crucible
>Isostatic Graphite Crucible
>Silicon Carbide Graphite Crucible
>Silicon Carbide Crucible
>Clay Graphite Crucible
>Quarts Crucible

SiC Crucible (3)

Features:

1. Long working life time
2. High thermal conductivity
3. New-style materials
4. Resistance to corrosion
5. Resistance to oxidation
6. High-strength
7. Multi-function

Technical Data of Material
Index	Unit	Standard value	Test value
Temperature Resistance	℃	1650℃	1800℃
Chemical Composition (%)	C	35~45	45
	SiC	15~25	25
	AL2O3	10~20	25
	SiO2	20~25	5
Apparent Porosity	%	≤30%	≤28%
Compressive Strength	Mpa	≥8.5MPa	≥8.5MPa
Bulk Density	g/cm3	≥1.75	1.78
Our silicon carbide crucible is isostatic forming, which can use 23 times in furnace, while others only can use 12 times