Key Factors in Producing High-Purity SiC Crystals for Advanced Applications
SiC crystal growth requires strict control of purity, temperature, and process parameters to produce high-quality, defect-free silicon carbide crystals.
Gün: 2 Temmuz 2025
SiC crystal growth requires strict control of purity, temperature, and process parameters to produce high-quality, defect-free silicon carbide crystals.
Semicera Semiconductor, Ar -Ge ve üretimi ikili araştırma merkezleri ve üç üretim üssü ile entegre ederek 50 üretim hattı ve 200+ çalışanı destekler.
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