Focus CVD SiC Ring

Focus CVD is a special chemical vapor deposition method that uses specific reaction conditions and control parameters to achieve localized focus control of material deposition. In the preparation of focus CVD SiC rings, the focus area refers to the specific part of the ring structure that will receive the main deposition to form the specific shape and size required.

Why is Focus CVD SiC Ring ?

Focus CVD SiC Ring is a silicon carbide (SiC) ring material prepared by Focus Chemical Vapor Deposition (Focus CVD) technology.

Focus CVD SiC Ring has many excellent performance characteristics. First, it has high hardness, high melting point and excellent high temperature resistance, and can maintain stability and structural integrity under extreme temperature conditions. Secondly, Focus CVD SiC Ring has excellent chemical stability and corrosion resistance, and has high resistance to corrosive media such as acids and alkalis. In addition, it also has excellent thermal conductivity and mechanical strength, which is suitable for application requirements in high temperature, high pressure and corrosive environments.

Focus CVD SiC Ring is widely used in many fields. It is often used for thermal isolation and protection materials of high temperature equipment, such as high temperature furnaces, vacuum devices and chemical reactors. In addition, Focus CVD SiC Ring can also be used in optoelectronics, semiconductor manufacturing, precision machinery and aerospace, providing high-performance environmental tolerance and reliability.

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✓Top-quality in China market

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Application

Epitaxy Growth Susceptor

Silicon/silicon carbide wafers need to go through multiple processes to be used in electronic devices. An important process is silicon/sic epitaxy, in which silicon/sic wafers are carried on a graphite base. Special advantages of Semicera’s silicon carbide-coated graphite base include extremely high purity, uniform coating, and extremely long service life. They also have high chemical resistance and thermal stability.

Silicon Epitaxy Susceptor

Silicon Carbide Epitaxy Susceptor

LED Chip Production

During the extensive coating of the MOCVD reactor, the planetary base or carrier moves the substrate wafer. The performance of the base material has a great influence on the coating quality, which in turn affects the scrap rate of the chip. Semicera’s silicon carbide-coated base increases the manufacturing efficiency of high-quality LED wafers and minimizes wavelength deviation. We also supply additional graphite components for all MOCVD reactors currently in use. We can coat almost any component with a silicon carbide coating, even if the component diameter is up to 1.5M, we can still coat with silicon carbide.

LED Epitaxy Susceptor

Semiconductor Field, Oxidation Diffusion Process, Etc.

In the semiconductor process, the oxidation expansion process requires high product purity, and at Semicera we offer custom and CVD coating services for the majority of silicon carbide parts.

The following picture shows the rough-processed silicon carbide slurry of Semicea and the silicon carbide furnace tube that is cleaned in the 1000-level dust-free room. Our workers are working before coating. The purity of our silicon carbide can reach 99.99%, and the purity of sic coating is greater than 99.99995%.