Wafer boats are key components in the semiconductor manufacturing process. Semiera is able to provide wafer boats that are specially designed and produced for diffusion processes, which play a vital role in the manufacture of high integrated circuits. We are firmly committed to providing the highest quality products at competitive prices and look forward to becoming your long-term partner in China.
مقاومة أكسدة ارتفاع درجة الحرارة
مقاومة تآكل ممتازة
مقاومة تآكل جيدة
معامل عالٍ من الموصلية الحرارية
التشحيم الذاتي ، منخفضة الكثافة
صلابة عالية
تصميم مخصص.
-Wear-resistant Field: bushing, plate, sandblasting nozzle,cyclone lining, grinding barrel,etc…
-High Temperature Field: siC Slab, Quenching Furnace Tube,Radiant Tube,crucible,Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Protection Tube, SiC boat,Kiln car Structure,Setter,etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic paddle, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway,etc.
-Silicon Carbide Seal Field: all kinds of sealing ring, bearing, bushing, etc.
-Photovoltaic Field: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller,etc.
-Lithium Battery Field
| ملكية | قيمة | طريقة |
| كثافة | 3.21 جم/سم مكعب | مغسلة والأبعاد |
| حرارة محددة | 0.66 J/G ° K. | فلاش الليزر النبضي |
| قوة الانثناء | 450 MPa560 MPa | 4 نقاط الانحناء ، RT4 Point Bend ، 1300 درجة |
| الكسر المتانة | 2.94 MPa M1/2 | microindentation |
| صلابة | 2800 | فيكرز ، 500 جرام |
| معامل معامل مرن | 450 GPA430 GPA | 4 Pt Bend ، RT4 Pt Bend ، 1300 درجة مئوية |
| حجم الحبوب | 2 - 10 ميكرون | SEM |
| الموصلية الحرارية | 250 W/m °K | Laser flash method, RT |
| Thermal Expansion (CTE) | 4.5 x 10-6 °K | Room temp to 950 °C, silica dilatometer |
| غرض | وحدة | Data | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| SiC content | % | 85 | 75 | 99 | 99.9 | ≥99 |
| Free silicon content | % | 15 | 0 | 0 | 0 | 0 |
| Max service temperature | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| كثافة | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Open porosity | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Bending strength 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Bending strength 1200℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Modulus of elasticity 20℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus of elasticity 1200℃ | Gpa | 300 | / | / | 200 | / |
| Thermal conductivity 1200℃ | W/m.K | 45 | 19.6 | 100-120 | 36.6 | / |
| معامل التمدد الحراري | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
The CVD silicon carbide coating on the outer surface of recrystallized silicon carbide ceramic products can reach a purity of more than 99.9999% to meet the needs of customers in the semiconductor industry.
