Porous tantalum carbide is mainly used for gas phase component filtration, adjusting local temperature gradient, guiding material flow direction, controlling leakage, etc. It can be used with another solid tantalum carbide (compact) or tantalum carbide coating from Semicera Technology to form local components with different flow conductance.
Semicera biedt gespecialiseerde tantalum carbide (TAC) coatings voor verschillende componenten en dragers. Semicera toonaangevend coatingproces stelt tantalum carbide (TAC) coatings in staat om een hoge zuiverheid, stabiliteit met hoge temperatuur en hoge chemische tolerantie te bereiken, de productkwaliteit van SIC/GAN -kristallen en EPI -lagen te verbeteren ((Graphiet gecoate TAC Susceptor), and extending the life of key reactor components. The use of tantalum carbide TaC coating is to solve the edge problem and improve the quality of crystal growth, and Semicera has breakthrough solved the tantalum carbide coating technology (CVD), reaching the international advanced level.
Na jaren van ontwikkeling heeft Semicera de technologie veroverd van CVD TAC met de gezamenlijke inspanningen van de R & D -afdeling. Defecten zijn gemakkelijk op te treden in het groeiproces van SIC -wafels, maar na het gebruik TAC, the difference is significant. Below is a comparison of wafers with and without TaC, as well as Semicera’ parts for single crystal growth
In addition, the service life of Semicera’s TaC coating products is longer and more resistant to high temperature than that of SiC coating. After a long time of laboratory measurement data, our TaC can work for a long time at a maximum of 2300 degrees Celsius. The following are some of our samples:
