High-Purity SiC Coated Graphite Susceptor for Wafer Processing

The Semicera’s High-Purity CVD SiC Coated Graphite Wafer Carrier Susceptor is designed for semiconductor high-temperature processes such as MOCVD, CVD, and epitaxial growth. It is manufactured using high-purity graphite as the base material, with a dense silicon carbide (SiC) coating deposited via chemical vapor deposition (CVD).

The SiC coating provides excellent protection against oxidation, chemical corrosion, and particle contamination, significantly improving service life and process stability under harsh thermal environments.

This product ensures stable wafer support, uniform heat transfer, and high-temperature structural integrity, making it suitable for advanced semiconductor and LED manufacturing processes.

Beschrijving

Silicon carbide (SiC) ceramics exhibit excellent mechanical properties at room temperature, including high strength, high hardness, and a high elastic modulus. They also provide outstanding high-temperature performance, such as high thermal conductivity, low thermal expansion coefficient, and excellent specific stiffness, along with good machinability for precision optical and structural applications.

Due to this unique combination of properties, SiC ceramics are particularly suitable for precision components used in integrated circuit manufacturing equipment, including lithography systems. Typical applications include SiC carriers/susceptors, wafer boats, vacuum chucks, water-cooling plates, precision optical mirrors, gratings, and other high-precision ceramic structural parts used in semiconductor processing equipment.

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Advantages

  • High-purity graphite substrate with CVD SiC coating
  • Excellent oxidation and corrosion resistance up to high temperatures
  • Dense, uniform, and pinhole-free SiC protective layer
  • Superior thermal conductivity for uniform wafer heating
  • Low particle generation for cleanroom environments
  • Strong adhesion between the SiC coating and the graphite base
  • High temperature resistance: normal use at 1600 ℃
  • Suitable for long-term high-temperature operation
  • High thermal conductivity:  equivalent to graphite material
  • High hardness:  hardness second only to diamond, boron nitride

Semicera can provide customers with customized wafer carriers of silicon and silicon carbide materials to meet different applications. 

Semicera’s typical Data

Eigendom Waarde
Dikte 3.21 g/cc
Specific heat 0.66 J/g °K
Buigsterkte 450 MPa560 MPa
Fracture toughness 2.94 MPa m1/2
Hardheid 2800
Elastic ModulusYoung’s Modulus 450 GPa430 GPa
Grain size 2 – 10 µm

 

Bedrijfsprofiel

Semicera Semiconductor is a supplier of advanced semiconductor ceramic components, providing high-performance materials and precision parts for semiconductor and photovoltaic applications. The company has capabilities in high-purity silicon carbide ceramics, including recrystallized silicon carbide (R-SiC), as well as CVD silicon carbide (SiC) coatings.

In addition, Semicera also works with a range of advanced technical ceramics, such as alumina (Al₂O₃), aluminum nitride (AlN), zirconia (ZrO₂), and silicon nitride (Si₃N₄), to meet diverse application requirements.

Our main products include silicon carbide etching discs, silicon carbide boat carriers, silicon carbide wafer boats (for photovoltaic and semiconductor processes), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide beams, as well as CVD SiC coatings and TaC coatings.

These products are widely used in semiconductor and photovoltaic manufacturing, including crystal growth, epitaxial deposition, etching, packaging, coating processes, and diffusion furnace systems.

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