The CFC crucible, also known as a carbon/carbon composite crucible, is a high-temperature-resistant and high-strength container fabricated from carbon fiber-reinforced carbon matrix. It is primarily used in the high-temperature thermal environments for semiconductor monocrystalline and polycrystalline silicon production.
The CFC support ring, also known as a carbon fiber-reinforced carbon-based composite support ring, is a high-performance structural component fabricated using carbon fiber as the reinforcement and carbon as the matrix through carbonization and graphitization processes.
CFC carbon-carbon composite materials, boasting exceptional purity, high-temperature resistance, low thermal expansion, superior thermal conductivity, and minimal impurity precipitation, are specifically engineered for monocrystalline silicon and silicon carbide (SiC) crystal growth furnaces. They provide a comprehensive range of high-temperature thermal field components that replace traditional graphite parts, optimizing performance for advanced semiconductor and photovoltaic crystal growth processes while addressing critical challenges such as high-temperature deformation, impurity contamination, thermal field instability, and shortened service life.
SiC crystal growth faces challenges such as high difficulty, lengthy R&D cycles, and elevated costs, posing major challenges in reducing costs, increasing production volume, and improving quality. Porous graphite emerges as the optimal solution to this issue.
The SiC-coated graphite substrate is a semiconductor component used for supporting and heating single-crystal substrates in MOCVD (metal organic chemical vapor deposition) equipment.
Driven by emerging technologies such as Micro LED, Mini LED, and high-power general lighting, the manufacturing of LED epi-wafers is facing unprecedented challenges.
In the global third-generation semiconductor material system, Chemical Vapor Deposition Silicon Carbide (CVD-SiC) is shifting from a “special material” to a “strategic material.”
In the wave of innovation of third-generation semiconductors, breakthroughs in materials have always been the core driving force of industrial development.
In advanced-node semiconductor fabrication, the stability of equipment and materials has become a decisive factor restricting yield improvement.
